ace 230 4 n - channel enhancement mode mosfet ver 1. 3 1 description the ace230 4 is the n - channel logic enhancement mode power field effect transistor are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on - state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and battery powered circuits, and low in - line power loss are needed in a very small outline surface mount package. features ? 3 0v/3. 2 a, r ds(on) = 65 m@v gs = 10 v ? 3 0v/ 2.0 a, r ds(on) =9 0 m@v gs = 4 .5v ? super high density cell design for extremely low r ds(on) ? exceptional on - resistance and maximum dc current capability application ? power management in note book ? portable equipment ? battery powered system ? dc/dc con verter ? load switch ? dsc ? lcd display inverter absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v dss 30 v gate - source voltage v gss 20 v continuous drain current (t j =150 ) t a =25 i d 3.2 a t a =70 2.6 pulsed drain current i dm 10 a continuous source current (diode conduction) i s 1.25 a power dissipation t a =25 p d 1.25 w t a =70 0.8 operating junction temperature t j 150 o c storage temperature range t stg - 55/150 o c thermal resistance - junction to ambient r ja 100 o c /w
ace 230 4 n - channel enhancement mode mosfet ver 1. 3 2 packaging type sot - 23 - 3 3 1 2 ordering i nformation ace 230 4 xx + h electrical characteristics t a =25 , unless otherwise noted parameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0v, i d =250 ua 3 0 v gate threshold voltage v gs(th) v d =v gs , i d =250ua 1. 5 1.7 3.0 gate leakage current i gss v ds =0v,v gs = 20 v 100 na zero gate volta ge drain current i dss v ds = 3 0 v, v gs = 1. 0v 1 ua v ds = 30 v, v gs =0v t j = 5 5 10 on - state drain current i d(on) vds R 4. 5 v, v gs = 10 v 6 a vds R 4. 5 v, v gs = 4 .5 v 4 drain - source on - resistance r ds(on) v gs = 10 v, i d = 3. 2 a 0.050 0.0 65 v gs = 4 .5 v, i d = 2.0 a 0.0 65 0.0 9 0 forward transconductance g fs v ds = 4. 5 v,i d = 2.5 a 4.6 s diode f orward voltage v sd i s = 1. 25 a, v gs =0v 0.8 2 1.2 v s o t - 2 3 - 3 description 1 gate 2 source 3 drain b m : sot - 23 - 3 pb - free h alogen - free
ace 230 4 n - channel enhancement mode mosfet ver 1. 3 3 dynamic total gate charge q g v ds =1 5 v, v gs = 10 v, i d = 2.5 4.5 1 0 nc gate - source charge q gs 0.8 gate - drain charge q gd 1.0 input capacitance ciss v ds = 1 5 v , v gs =0v, f=1mhz 240 pf output capacitance c oss 110 reverse transfer capacitance crss 17 turn - on time td(on) v dd = 15 r l = 15 , i d = 1.0 a, v gen = 10 , r g =6 8 20 ns tr 12 30 turn - off time td(off) 17 35 tf 8 20 typical performance characteristics output characte ristics transfer characteristics v ds - drain - to - source voltage (v) v gs - gate - to - source voltage (v) on - resistance vs. drain current capacitance i d - drain current (a) v d s - drain - to - source voltage (v)
ace 230 4 n - channel enhancement mode mosfet ver 1. 3 4 gate charge on - resistance vs. junction temperature q g - total gate charge (nc) t j - junction temperature ( ) source - drain diode forward voltage on - resistance vs. gate - to - source voltage v sd - source - to - drain voltage (v) v gs - gate - to - source voltage (v) threshold voltage single pulse power t j - temperature( ) time (sec)
ace 230 4 n - channel enhancement mode mosfet ver 1. 3 5 normalized thermal transient impedan ce, junction - to - ambient square wave pulse duration ( s ec)
ace 230 4 n - channel enhancement mode mosfet ver 1. 3 6 packing information so t - 23 - 3
ace 230 4 n - channel enhancement mode mosfet ver 1. 3 7 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, a nd shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or sys tem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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